This publication supersedes and replaces all information previously supplied. It was originally made in the to18 metal can as shown in the picture the 2n2222 is considered a very common transistor, and is used as an exemplar. To3 qualified per milprf19500523 devices 2n6384 2n6385 qualified level jan, jantx jantxv. Elektronische bauelemente npn plastic encapsulated. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current. Specification mentioned in this publication are subject to change without notice. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. This unijuction transistor is packaged in to5 package, which has a power rating of 450mw. Circuit, arduino, transistor, diode, sensor, led it offers a large amount of data sheet, you can free pdf files. The mj15022 and mj15024 are power transistors designed for high. Npn silicon transistor, 2sc1841 datasheet, 2sc1841 circuit, 2sc1841 data sheet. Toshiba transistor silicon npn epitaxial type pct process.
D718 datasheet vcbo120v, 8a, npn transistor toshiba. Nec, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. N stands for ntype material and p stands for ptype material. Applications datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. The 2n3904 is an npn transistor that can only switch onethird the current of the 2n2222 but has otherwise similar characteristics. Typical parameters which may be provided in scillc data sheets andor specifications can and do vary in. Here is an image showing the pin diagram of the this transistor. The 2n2222 is a common npn bipolar junction transistor bjt used for general purpose lowpower amplifying or switching applications. Aug 30, 2018 2sc1815 npn transistor toshiba, circuit, pinout, schematic, equivalent, replacement, data, sheet, manual and application notes.
Bcp56 datasheet, bcp56 pdf, bcp56 data sheet, bcp56 manual, bcp56 pdf, bcp56, datenblatt, electronics bcp56, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets, databook, free datasheet. Free packages are available maximum ratings rating symbol value unit collector. Ksc1845f datasheet, equivalent, cross reference search. Typical parameters which may be provided in scillc data sheets andor. The 2sc1841 is manufactured in a plastic to92 case. Npn general purpose transistors in a small sot23 to236ab, very small. Elektronische bauelemente npn plastic encapsulated transistor.
Unit vcbo collectorbase voltage open emitter 50 v vceo collectoremitter voltage open base 45 v. Bc556b, bc557a, b, c, bc558b amplifier transistors on. St 2sc828 828a npn silicon epitaxial planar transistor for switching and af amplifier applications. Unit vcbo collectorbase voltage open emitter 40 v vceo collectoremitter voltage open base 40 v. The device is a npn transistor manufactured by using planar technology resulting in rugged high performance devices. Texas instruments released a data sheet for their version of this part dated march 1973. High gainbandwidth product charac teristic provides excellent performance in a variety of small signal and linear amplifier applications, 1a a r b a style 1 d0 2 1003. The datasheet is printed for reference information only.
The gain of the 2sc4007e will be in the range from 100 to 200, 2sc4007f ranges from 160 to 320, 2sc4007g ranges from 250 to 500. Pnp general purpose transistor 2n4126 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Highreliability discrete products and engineering services since 1977 2n44412n4444 silicon controlled rectifiers rev. These transistors are subdivided into three groups q, r and s according to their dc current gain. February 2003 sjd00094bed 1 2sc1846 silicon npn epitaxial planar type for medium output power amplification complementary to 2sa0885 features low collectoremitter saturation voltage v cesat output of 3 w can be obtained by a. The fja09 is a 700 v 12 a npn silicon epitaxial planar transistor the fja09 is designed for high speed switching applications which utilizes the industry standard to3p package offering flexibility in design and excellent power dissipation. Emitter voltage 2n4123 2n4124 vceo 30 25 vdc collector. Silicon transistor 2sc1623 features high dc current gain. Vceo 50 v absolute maximum ratings maximum voltages and current ta 25. Pnp general purpose transistor 2n4126 limiting values in accordance with the absolute maximum rating system iec 4. Bf494 datasheet, bf494 pdf, bf494 data sheet, bf494 manual, bf494 pdf, bf494, datenblatt, electronics bf494, alldatasheet, free, datasheet, datasheets, data sheet. Bjts have 3 terminals and come in two varieties, as npn and pnp transistors. Pinning pin description 1 emitter 2 base 3 collector, connected to case.
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Applications highspeed switching in industrial applications. See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Recent listings manufacturer directory get instant insight into any electronic component. The 2sc4007 transistor might have a current gain anywhere between 100 and 500. Collectoremitter voltage collectorbase voltage emitterbase voltage base current collector current total power dissipation. Bc846 series 65 v, 100 ma npn generalpurpose transistors. Microelectronics, alldatasheet, datasheet, datasheet search site for electronic.
The gain of the 2sc4007e will be in the range from 100 to 200, 2sc4007f. Pnp general purpose transistor bc177 limiting values in accordance with the absolute maximum rating system iec 4. It has lange dynamic range and good current characteristic. February 2003 sjd00094bed 1 2sc1846 silicon npn epitaxial planar type for medium output power amplification complementary to 2sa0885 features low collectoremitter saturation voltage v cesat output of 3 w can be obtained by a complementary pair with 2sa0885. The 2n3904 exhibits its forward gain beta peak at a lower current than the 2n2222, and is useful in amplifier applications with reduced i c, e. High gainbandwidth product charac teristic provides excellent performance in a variety of small signal. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Free devices maximum ratings rating symbol value unit collector. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. Ss9015 pnp epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter ratings units vcbo collectorbase voltage 50 v vceo collectoremitter voltage 45 v vebo emitterbase voltage 5 v ic collector current 100 a. This datasheet contains preliminary data, and supplementary data will be published at a later date. Elektronische bauelemente npn plastic encapsulated transistor 14feb2011 rev.
Bc546b, bc547a, b, c, bc548b, c amplifier transistors arduino. Silicon npn epitaxial planar transistor complement to type 2sa1216 application. Description npn switching transistor in a to18 metal package. Mj15022 silicon power transistors on semiconductor. Npn silicon transistor, 2sc1845 datasheet, 2sc1845 circuit, 2sc1845 data sheet.
C collector to base voltage vcbo 60 v collector to emitter voltage vceo 50 v emitter to base voltage vebo 5. Npn silicon af transistors for af driver and output stages high collector current infineon technologies a. Transistors peter mathys ecen 1400 transistor families there are two major families of transistors. The 2n2907 is a commonly available pnp bipolar junction transistor used for general purpose lowpower amplifying or switching applications. Bipolar junction transistors bjt and fieldeffect transistorsfet. Type number package name description version 2n3906 sc43a plastic singleended leaded through hole package. Motorola order this document semiconductor technical data by 2n4402d general purpose transistors 2n4402 pnp silicon 2n4403 motorola preferred device collector 3 2 base 1 emitter 1 2 3 maximum ratings case 2904, style 1 rating symbol value unit to92 to226aa collectoremitter voltage vceo 40 vdc collectorbase voltage vcbo 40. D718 datasheet pdf, d718 datasheet, d718 pdf, d718 pinout, d718 data, d718 circuit, d718 transistor, d718 manual, d718 substitute, d718 schematic. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Base npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted symbol parameter value units vcbo collectorbase voltage 120 v vceo collectoremitter voltage 120 v vebo emitterbase voltage 5 v ic collector current 50 ma ib base current 10 ma pc collect.
On special request, these transistors can be manufactured in different pin configurations. Npn silicon transistor, 2sc1815 datasheet, 2sc1815 circuit, 2sc1815 data sheet. See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Toshiba catalog page 30, datasheet, datasheet search, data sheet, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, semiconductors. Highreliability discrete products and engineering services since 1977 2n1671a c unijunction transistors rev.
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